Webb1 jan. 2024 · NiPS3 is semiconducting in nature, and its band structure calculations revealed the importance of the [P2S6]4- units in the adsorption of hydrogen and … WebbFirst and foremost, the excitons found in NiPS 3 is intrinsically a quantum state arising from a transition from a Zhang-Rice triplet to a Zhang-Rice singlet. Second, it is almost a...
Magnetochemistry Free Full-Text Phototransistors Based on hBN ...
Webb5 jan. 2024 · Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS 3) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to … The present study has shown the possibilities of fabricating field effect transistors using layered phosphochalcogenides, NiPS3. The FET characteristics show n-type behavior with on/off ratio of 103–105. The DFT studies have predicted the transport characteristics and are experimentally verified. The … Visa mer The output characteristics of the bi-layer NiPS3 device, source-drain voltage (Vds) vs. source-drain current (Ids) at different gate voltages are … Visa mer Density functional theory (DFT) calculations have been performed to decipher the electrical transport behavior of NiPS3. The crystal structure of NiPS3 (Fig. 6a) illustrates … Visa mer tl chin\u0027s
Variation between Antiferromagnetism and Ferrimagnetism in NiPS3 …
Webb27 mars 2024 · Strong charge-spin coupling is found in a layered transition-metal trichalcogenide ${\\mathrm{NiPS}}_{3}$, a van der Waals antiferromagnet, from studies … Webb10 aug. 2024 · Optically, NiPS 3 has a charge-transfer gap of ~1.8 eV 7 at low temperature. Below this charge excitation lies a rich spectrum of sub-gap absorption resonances (Fig. 1 b), including on-site d - d... Webb12 juli 2024 · 紫外光电探测器广泛应用于辐射器校准、火灾探测、卫星光学通讯和生物传感等领域。. 传统的紫外光电探测器存在半导体材料与硅基质之间晶格失配和热膨胀系数不匹配等问题,阻碍了紫外光电探测的发展。. 二维材料通过范德华力附着在基底材料上因此不 … tl chem